blg50t65fdla
50t65，hv，高压，igbt
product manuals
advantage
- fast switching
- low vce(sat)
- positive temperature coefficient
- fast recovery anti-parallel diode
- rohs product
introduction
blg50t65fdla is obtained by advanced trench field stop (t-fs) technology which is characteristic with low vce(sat), optimized switching performance and low gate charge qg. the igbt is suitable device for photovoltaic, ups and high switching frequency applications.
